Effect of Dimension & Material Composition on Transmission Coefficient and Tunneling Current of Double Quantum Barrier Structure with Band Nonparabolicity
نویسندگان
چکیده
-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material composition is taken as an example for calculation, and thickness of the barrier and well regions are varied along with material compositions of AlxGa1-xAs to study the effect on electrical parameters; and also to observe the existence of quasi-bound states. Effective mass mismatch at junctions is considered following envelope function approximation, and conduction band discontinuity is taken into account for computational purpose. Under low biasing condition, negative differential regions (NDR) can be obtained which speaks in favor of tunneling current. Keywords--Double Quantum Barrier, Transfer Matrix Method (TMM), Transmission Coefficient, Eigen Energy, Tunneling Current, Negative Differential Resistance (NDR)
منابع مشابه
Quantum current modeling in nano-transistors with a quantum dot
Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterial’s in thecarbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductormaterials, from the elements in the periodic groups of II-VI, III-V or IV-VI, mainly thanks to impacts of quantum confinement QDs have unique optical properties such as brighter, highly pho...
متن کاملTheoretical Computation of Transmission Coefficient of Double Quantum Well Triple Barrier Structure in Presence of Electric Field
A numerical computation for determination of transmission coefficient of a double quantum well triple barrier structure is carried out considering GaAs/AlxGa1-xAs material composition for finite contact barrier thickness to estimate the probability of resonance at specific energy values less than barrier potential in presence and absence of electric field using transfer matrix technique. Barrie...
متن کاملPerformance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کامل